DRAM IC Distributor in China
- Consists of a 32-bit RISC master processor.
- With a 100-MFLOPS floating-point unit.
- DRAM IC features high-performance, and low power.
- Operates in a wide temperature range from low temperature to high temperature.
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Reliable DRAM IC Distributor Supplier - Rantle East Electronic
RANTLE offers many parts of DRAM IC with high quality standard. It consists of a 32-bit RISC master processor with a 100-MFLOPS floating-point unit. DRAM is a type of RAM that maintains its content as long as the data stored in the device is refreshed at regular intervals.
RANTLE DRAM IC requires a refresh cycle every few milliseconds in order to retain its data. The data is stored in a capacitor which slowly leaks, the refresh cycle re-charges the capacitor.
RANTLE DRAM is cheaper than SRAM. However, DRAM is slower because of the longer access times.
RANTLE DRAM IC features high-performance, and low power. It comes with 256K bytes zero-wait state on chip RAM composed of 64K bytes of dual access RAM, 8 blocks of 4K × 16 bit.
It is being suitable for power supply of SoC can be output to 4 A (max). Memory IC have foldback type protection, which be released automatically from the overcurrent is user selectable.
Additionally, RANTLE DRAM IC operates in a wide temperature range from low temperature to high temperature. It has a transfer controller with up to 400-MBps off-chip transfer rate, and a video controller. All the processors are coupled tightly through an on-chip crossbar that provides shared access to on-chip RAM.
This performance and programmability make memory IC ideally suited for video, imaging, and high-speed telecommunications applications.
RANTLE East Electronic spreads reputable business philosophy and achieves wide support of the customer for almost 16 years.
RANTLE supplies the best DRAM IC in the industry. We always make sure that our product is made up of carefully chosen materials and technology to meet the high-standards of the customers.
RANTLE is the strong sources of electronic components and offers dense purchasing network, quality warranted products, swift delivery, and excellent after-sale service.
RANTLE is the most trustworthy and reliable electronic component supplier. Hurry and contact our hard-working sales team today!
Electronic Components Memory IC Related Components: EEPROM IC , EMMC IC , EPROM IC , FIFO IC , FRAM IC , NAND FLASH IC , NOR Flash , NVRAM IC , SRAM IC
Related Electronic Components: 93LC46BT-I/ST , PIC18F25K22T-I/SS , MCP6547-E/SN
DRAM IC: The Ultimate FAQ Guide
If you have questions on DRAM ICs, you will find all answers here.
Today’s guide will focus on every fundamental aspect of the DRAM integrated circuit.
By the end of it all, you will be an expert in the DRAM IC industry.
- What is a DRAM IC?
- Why is DRAM IC considered Dynamic?
- Is DRAM IC used for the main Memory?
- What are the Advantages of DRAM IC?
- What are the Disadvantages of DRAM Chip?
- How does DRAM IC Work?
- What is Synchronous and Asynchronous DRAM IC?
- What is the difference between Dynamic and Static RAM IC?
- What is the difference between DRAM and RAM?
- What are the Types of Dynamic RAM ICs?
- What are the Components of a DRAM IC?
- How is a DRAM IC Organized?
- What is the meaning of DDR in DRAM ICs?
- How can you read Data from DRAM Storage Cell?
- What are DDR1, DDR2, and DDR3?
- What is GDDR Synchronous Dynamic RAM IC?
- What are the characteristics of a DRAM IC?
- Why must a DRAM IC be Refreshed Periodically?
- How often does a Memory Controller Automatically Refresh Memory in Dynamic RAM IC?
- What are RAS and CAS in DRAM ICs?
- How does DRAM Temporarily Retain Data?
- What should you consider when Buying a DRAM IC?
- How can you Package DRAM IC?
What is a DRAM IC?
DRAM is short for Dynamic Random Access Memory. A DRAM IC is a random access memory chip that stores volatile data in memory cells and allows higher densities.
Why is DRAM IC considered Dynamic?
A dynamic RAM is called dynamic because it needs constant refreshing in order to retain its contents.
A dynamic RAM IC is composed of memory cells. Each memory cell is made of a dual unit of a transistor and a capacitor.
Each capacitor stores a data bit while the transistor amplifies or switches the charge.
The transistor is prone to leakage and as such usually causes gradual discharging of the capacitor.
Discharging of the capacitor causes it to lose information stored.
To prevent loss of this information, a DRAM IC is refreshed every few tenths of a second to preserve data.
When you refresh, you provide a new electronic charge to the capacitor.
Is DRAM IC used for the main Memory?
Yes, it is.
DRAM ICs are utilized as the main memory because of the following reasons:
As with any other RAM type, memory in a DRAM IC can be accessed randomly.
DRAM ICs allow much higher densities and lower costs.
DRAM ICs consume less power compared to other RAM types such as the SRAM.
What are the Advantages of DRAM IC?
You will derive the following advantages in employing the DRAM IC.
- A DRAM IC is affordable in terms of cost compared to other RAM types such as SRAM IC.
- You find DRAM ICs have larger storage capacities.
- You can delete a DRAM IC memory and refresh it while simultaneously running the program.
- You find DRAM ICs are small and therefore consume less space.
- DRAM ICs have simple architecture.
What are the Disadvantages of DRAM Chip?
You will establish the following limitations in using DRAM ICs.
- Comparing the DRAM IC to other types of RAM such as static RAM, you find that it is slower. This means you take a relatively long time to access data on a DRAM IC.
- Data on a DRAM IC requires constant refreshing resulting in high power consumption.
- You find that data in a DRAM IC is volatile
- Despite DRAM ICs themselves having simple construction, they require complex external circuitry to sustain periodic refreshing.
How does DRAM IC Work?
A DRAM IC is made up of memory cells each consisting of a transistor and a capacitor.
The transistor charges and discharges the capacitor acting as a switch.
When a voltage is applied to the address line, the transistor allows current flow as in a closed switch.
When there is no application of a voltage, the transistor is considered an open switch.
The capacitor stores data as a charge.
The memory cells are configured in a column and row array. The columns are referred to as bit-lines while the rows are called word-lines.
Where the bit-line and word-line intersect is referred to as a memory address.
To function, a DRAM IC releases a charge to a particular column. The transistor located at each bit in the column is activated.
During the “write” procedure, the capacitor state is determined by the row lines.
During the read procedure, the capacitor’s charge level is determined by the sense-amplifier. This is because each capacitor stores charge too small to read directly.
A charge level of more than fifty percent is read as logic “1”. A charge level of less than fifty percent is read as logic “0”.
Reading from the bit-line causes an outflow of charge from the capacitor. This, if unchecked, results in data loss.
To return the read value from the bit-line into the capacitor, a pre-charging operation is carried out.
The order of refreshing is monitored by a counter according to the order of accessing the rows.
What is Synchronous and Asynchronous DRAM IC?
Here is what you should know:
· Synchronous DRAM Integrated Circuit
A synchronous dynamic RAM is a DRAM IC type where access to memory is coordinated by the system clock.
This way, the processor is able to determine the number of cycles required to avail data from the RAM.
This improves the speed of read-or-write procedures. A synchronous DRAM IC, therefore, improves the efficiency of operations.
· Asynchronous DRAM Integrated Circuit
Asynchronous DRAM IC is presently obsolete having been used in the first generation of personal computers.
In this DRAM IC, access to memory is not coordinated by the system clock making access to data slow.
When an instruction to retrieve data is issued, it gets to the system bus in an undefined time.
What is the difference between Dynamic and Static RAM IC?
Both dynamic and static RAM ICs have volatile memory storage.
You will, however, find a number of differences between a dynamic (DRAM) and static (SRAM) RAM IC.
DRAM Integrated Circuit
- An SRAM IC is able to hold on to its memory data. However, this is only possible with a continuous supply of power.
On the other hand, you need to refresh DRAM IC constantly to ensure it retains the memory data.
- A DRAM IC’s core infrastructure consists of a transistor and a capacitor. The composition of an SRAM IC lacks the presence of capacitors utilizing only transistors.
- To store a single block of memory, a DRAM IC requires one transistor; an SRAM IC requires six transistors for the same use.
- DRAM ICs are utilized mostly as computer main memory. SRAM ICs are utilized as cache memory.
- The high density in DRAM IC allows it to have larger storage than the SRAM IC.
- A DRAM IC being an off-chip memory is characterized by longer access time. SRAM ICs as on-chip memories have a short access time.
- In cost comparison, DRAM ICs are much affordable compared to SRAM ICs.
- Charge leakage in the DRAM IC capacitors causes it to have more power consumption needs than SRAM ICs.
What is the difference between DRAM and RAM?
Random Access Memory (RAM) IC is a computer memory chip that allows data access in no particular order.
This way, any particular byte of data in the chip can be accessed independently of the others.
Most RAM is used as a computer main or working memory.
Depending on the method used to hold data, RAM ICs are categorized as either dynamic or static.
Dynamic RAM IC stores its data in a capacitor in the form of a charge. It also requires continuous refreshing to retain data due to subsequent loss of charge by leakage.
What are the Types of Dynamic RAM ICs?
You will find the following common types of DRAM ICs.
i. Fast Page Mode (FPM) DRAM IC
FPM RAM is a DRAM IC that speeds up data access to data in the same page or row.
If the new data location is the row that was accessed previously, it discards the need for a row address.
Presently outdated, this DRAM IC type preceded the Extended Data Out DRAM IC. It is faster than the regular DRAM IC but slower than EDO DRAM IC.
ii. Extended Data Out (EDO) DRAM IC
An EDO DRAM IC can simultaneously access the succeeding memory block while sending the preceding memory block to the processor.
This is an improvement on the regular DRAM IC which can only access one data block at a time.
EDO DRAM IC provided improved performance over the FPM DRAM IC. It is however not operational on a bus speed of over 66MHz.
iii. Burst EDO (BEDO) DRAM IC
The BEDO DRAM IC was made as an improvement on the speed needs of the EDO DRAM IC.
This memory chip can process four memory addresses in an instance. Its synchronization with the system clock is only for short intervals.
iv. Synchronous DRAM IC (SDRAM)
The synchronous DRAM IC utilizes the system clock in coordinating memory access.
This allows the memory controller to determine the particular clock cycle that will deliver the requested data.
You find computer memories utilizing synchronous DRAM ICs are faster in operation aspects.
v. Double Data Rate (DDR) SDRAM IC
This is a DRAM IC with synchronous capability in addition to its doubling of the memory bandwidth at a similar clock frequency.
The doubling of the bandwidth is possible through “double pumping”.
Double pumping allows data transfer on both a clock signal’s rising edge and falling edge without altering the clock frequency.
What are the Components of a DRAM IC?
A DRAM IC consists of memory cells configured in a column and row array. A DRAM IC is able to carry thousands of such memory cells.
Each memory cell is made up of a capacitor and a transistor. The capacitor stores the data in the form of a charge with each capacitor storing a single bit of data.
The transistor switches or amplifies the electrical charge.
How is a DRAM IC Organized?
DRAM ICs are organized in modules on a computer’s mainboard. A module is a configured circuit board on which DRAM ICs are arranged.
DRAM ICs can be organized as a Single In-Line Module (SIMM) or Dual In-Line Memory Module (DIMM).
· Single Inline Memory Module (SIMM)
You will find multiple DRAM IC chips mounted on a small circuit board with a card edge connector.
This connector is constructed to fit a socket on the motherboard. The SIMM module can be identified by its 32-bit data bus.
SIMM is of two forms:
Even though these SIMMs are obsolete, you can still find them. They are too slow and small to be put in current usage though.
These SIMMs were released for the:
- Fast Page Mode (FPM) DRAM IC,
- Extended Data Out (EDO) DRAM IC and
- Burst- Extended Data Out (BEDO) DRAM IC.
Though presently outdated, they are applicable in some later computer systems and for memory expansion in select laser printers.
· Dual Inline Memory Module (DIMM)
The Dual Inline Memory Module is a modern feature of the organization of DRAM ICs.
These modules are identifiable with the presence of connectors on both sides of the circuit board.
They are available with different pin numbers. You can find DIMMs with 100 pins and some even with 288 pins.
It supports a 64-bit data bus, twice that of the SIMM. This wide bus provides the passage of more data positively affecting performance speed.
What is the meaning of DDR in DRAM ICs?
DDR is short for double data rate.
It refers to the ability of a synchronous DRAM IC to transfer data on both the edges of the clock signal.
This is referred to as double pumping or transition. As such in double data rate, the data transmitted in a cycle is two times that of an SDRAM IC.
How can you read Data from DRAM Storage Cell?
Through the following procedures, you easily read information from the DRAM IC.
- When you disconnect the sense amplifier, the system will pre-charge the bit-lines to a median value.
Consider that 1V is needed for the high logic level assigned “1” and 0V for low logic level “0”. The median voltage value consequently is 0.5V.
- Thereafter, you can disconnect the pre-charge system of the circuit. Due to the bit-lines length, they possess adequate capacitance to preserve pre-charge voltage momentarily.
- A storage cell’s capacitor is connected to its bit-line by, enabling to high, the word-line to the row address.
The transistor is turned on supplying the charge stored in the capacitor to the bit-line, for logic value 1.
For logic value 0, the charge is supplied form the bit-line to the capacitor.
- The voltage change in the bit-line is marginal due to its high capacitance than that of the storage cell.
- The charge transfer also enables the sense amplifiers to connect to the bit-lines set. The inverters respond positively.
Considering a definite column, the marginal voltage will be amplified which is the difference between the even row bit lines and odd row bit lines.
- Amplification is sustained until one bit-line achieves the least possible voltage and the other, the highest possible voltage.
Subsequently, the row is considered open allowing access to the data of the targeted cell.
- It will perceive the storage cells that exist in the row that is now open at the same time. The outputs to the sense amplifier are latched.
Here, the column address will determine the latch bit which you will connect to external data bus.
With this, you can read data from different columns which can be in the same row.
- During the “read” process, the storage cells are recharged. This is by current from the sense amplifiers output that flows back up the bit-lines.
This maintains the respective charge levels of the storage cell (keeping it charged or discharged).
- On completion of the “read” process for all columns in the open row, the word-line is deactivated. This terminates the connection between the storage cell capacitors and the bit-lines.
- With the row closed, the sense amplifier is turned off and the bit-lines get to pre-charge once more.
What are DDR1, DDR2, and DDR3?
They simply imply:
· DDR 1
Double Data Rate (DDR) 1 is an improved SDRAM IC that transfers data two times over the regular SDRAM IC.
This is due to DDR’s ability to double the signal sent and received for every clock cycle.
It is able to do this through a process called double pumping. Here, data is transferred on both edges of the buys clock signal, that is, the rising edge and falling edges.
· DDR 2
DDR 2 represents an advancement in DDR 1 technology. Like in DDR I, there is double pumping of the data bus.
In addition, DDR 2 is capable of higher bus speed. The internal clock is also run at half the data bus speed enabling low power requirements.
This way, the DDR 2 SDRAM IC conducts four transfers of data for each internal clock cycle.
· DDR 3
DDR 3 is a successor to the DDR 2. DDR 3 produces twice the data transfer rate of a DDR 2 SDRAM IC.
This means that the DDR3 is able to transfer data to the tune of eight times its internal bus speed.
It is through carrying two data transfers for each internal clock cycle whose signal has been divvied into four. This enables maximum data transfer rates.
What is GDDR Synchronous Dynamic RAM IC?
Graphics DDR SDRAM IC is a special type of DDR SDRAM uniquely built to work with graphics processing units (GPUs).
GDDR and regular DDRs have the unity of having corresponding design architecture.
However, the graphics DDR has other outstanding features that are tailored to improve its performance as follows.
- The GDDR 1 usually sends 16 data bits in comparison to DDR 1s 9 bits.
- GDDR offers higher performance consuming less power and emitting even lesser heat. This results in it needing a simple cooling system.
- GDDR is constructed to support higher bandwidth given its memory bus that is wider than that of DDRs.
- A graphics DDR is able to send and receive data on the same internal clock cycle.
What are the characteristics of a DRAM IC?
You find that DRAM ICs have the following characteristics attached to them.
- DRAM ICs need to be refreshed continuously to retain data in the storage cells.
- DRAM ICs have a limited lifetime of data.
- Compared to SRAM ICs, they are slower
- DRAM ICs are used as the main memory in many computers.
- DRAM ICs are small in size.
- DRAM ICs are less costly than SRAM ICs.
Why must a DRAM IC be Refreshed Periodically?
A DRAM IC needs to be refreshed periodically to preserve the data stored in the memory cells.
This is because the transistor in a DRAM ICs memory cell is prone to leakage causing the discharge of the capacitor.
When a capacitor is discharged, it loses the data stored within it.
To prevent loss of this information, a DRAM IC needs to be refreshed every fraction of a second.
Refreshing occurs when a new electronic charge is transmitted to the capacitor.
How often does a Memory Controller Automatically Refresh Memory in Dynamic RAM IC?
A memory controller typically takes milliseconds to automatically refresh memory in a dynamic RAM IC.
The time interval between successive refresh operations is referred to as the refresh interval. It is dependent on the ratio of the charge stored in the capacitor to the leakage currents.
A longer refresh time signifies a minimal number of leakage currents. You achieve longer refresh times by developing transistors that are less prone to leakage.
Leakage currents are directly related to temperature changes, thus an increase in temperature results in an increase in leakage currents. This necessitates a decrease in refresh times at higher temperatures.
What are RAS and CAS in DRAM ICs?
Here is what you should know:
A row address strobe (RAS) is a signal conjured by the processor to the DRAM to activate a specific row address.
A column address strobe (CAS) is a signal to the DRAM IC by a processor to validate a specific column address.
DRAM ICs store bits of data in memory cells configured in an array of columns and rows. Note that a single bit of data is stored in a single memory cell.
As such, each memory cell has a row and column address.
A computer processor utilizes RAS and CAS signals to communicate with the DRAM IC for data retrieval.
The RAS and CAS lines identify the required data row and column location respectively.
How does DRAM Temporarily Retain Data?
A DRAM IC temporarily retains data by the act of continuous refreshing of its storage cells.
Refreshing refers to the process a memory cell’s capacitor is recharged to replace charge lost. A capacitor loses its charge when it discharges as a result of leakage in a transistor.
This leakage is significant since a transistor determines the charge stored in a capacitor by acting as a switch or amplifier.
What should you consider when Buying a DRAM IC?
When purchasing a DRAM IC, you need to keep the following in mind.
DRAM Memory Cell Array
· DRAM IC Capacity
You need to consider the amount of DRAM IC you need depending on your needs. DRAM IC chips are available from as little as 2 GB to 64 GB.
Heavy computer applications such as visual effects for movies require more DRAM IC amount for seamless performance.
The frequency rating of a DRAM chip should be equal to or higher than that of your computer mainboard.
Purchasing a DRAM chip with a lower frequency will result in the failure of both the chip and circuit board.
A DRAM chip of higher frequency than the mainboard will operate at the motherboard’s frequency rating,
This is based on a DRAM IC’s latency setting.
Latency refers to the number of clock cycles a DRAM IC takes to output data requested by the processor.
The low latency of a DRAM IC is an indicator of its enhanced performance.
Selecting the appropriate DRAM IC interface is important for the sake of compatibility.
You cannot use a DDR 3 DRAM IC on the main circuit board with a slot for DDR 2 DRAM IC.
How can you Package DRAM IC?
You can package DRAM ICs as follows.
· Dual Inline Pin Package (DIPP)
This package is a rectangular chip with pins attached along the long sides. Early DRAM ICs such as the Fast Page Mode (FPM) DRAM IC used the DIP package.
Presently it finds limited use as it is obsolete.
· Single Inline Pin Package (SIPP)
This package modified the DIP package by turning it sideways and extending all the leads parallel to the chip plane.
The SIPP was provided to accommodate an increased memory density.
Currently outdated, the SIPP was used as a DRAM IC package for FPM, EDO and BEDO DRAM ICs.
· Single Inline Memory Module (SIMM)
With this package, you find multiple chips of DRAM ICs mounted on a mini circuit board.
The circuit board is constructed to fit a socket on the motherboard via a card edge connector.
The two form factors of SIMM you will find are the 30-pin and 72-pin.
These are currently obsolete as they are too slow and small to be put in current usage. This package was used for Page Mode DRAM ICs and Fast Page Mode DRAM ICs.
This package was used for FPM, EDO and BEDO DRAM ICs. You will not find them in much use today.
An instance of its declining usage is memory expansion for some laser printers.
· Dual Inline Memory Module (DIMM)
This package features connectors on both sides of the circuit board. DRAM ICs such as the synchronous DRAM IC and the DDR SDRAM ICs utilize this package. Different DRAM ICs each have different pin counts.
The SDRAM IC is packaged in DIMMs with 168 pins while the DDR SDRAM IC in DIMMs with 184 pins. The extra pins and a dissimilar keying notch positions are to inhibit their inadvertent exchange.
· Small outline DIMM (SODIMM)
This package is similar to the DIMM package but customized especially for notebook computers.
With all these in mind, you have probably learned a lot about DRAM ICs.
However, in case you have questions, feel free to contact us now.